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CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C209A3-H Issued Date : 2003.03.18
Revised Date : Page No. : 1/4
BTNA42A3
Description
* High breakdown voltage. (BVCEO=300V) * Low collector output capacitance. (Typ. 3pF at VCB =30V) * Ideal for chroma circuit.
Symbol
BTNA42A3
Outline
TO-92
BBase CCollector EEmitter
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 300 300 6 500 625 150 -55~+150 Unit V V V mA mW C C
BTNA42A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 300 300 6 25 52 40 50 Typ. 0.1 100 3 Max. 100 100 0.5 0.9 270 Unit V V V nA nA V V MHz pF
Spec. No. : C209A3-H Issued Date : 2003.03.18
Revised Date : Page No. : 2/4
Test Conditions IC=100uA IC=1mA IE=10uA VCB=200V VEB=6V IC=20mA, IB=2mA IC=20mA, IB=2mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA VCE=20V, IC=10mA, f=100MHz VCB=20V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Classification Of hFE2
Rank Range K 52~120 P 82~180 Q 120~270
BTNA42A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000 VCE=1V Current Gain---HFE Current Gain---HFE 1000
Spec. No. : C209A3-H Issued Date : 2003.03.18
Revised Date : Page No. : 3/4
Current Gain vs Collector Current
VCE=10V
100
100
10 0.1 1 10 Collector Current---IC(mA) 100
10 0.1 1 10 Collector Current---IC(mA) 100
Saturation Voltage vs Collector Current
10 10
Saturation Voltage vs Collector Current
VCE(sat)@IC=20IB
Saturation Voltage---(V)
VCE(sat)@IC=10IB 1 Saturation Voltage---(V) 0.1 1 10 100 1
0.1
0.1
0.01 Collector Current---IC(mA)
0.01 0.1 1 10 Collector Current---IC(mA) 100
Saturation Voltage vs Collector Current
1 700 600 Power Dissipation--- PD(mW) Saturation Voltage---(V) 500 400 300 200 100 0.1 0 1 10 Collector Current---IC(mA) 100 0 0
Power Derating Curve
VBE(sat)@IC=10IB
50 100 Ambient Temperature---Ta( )
150
BTNA42A3
CYStek Product Specification
CYStech Electronics Corp.
TO-92 Dimension
2
Spec. No. : C209A3-H Issued Date : 2003.03.18
Revised Date : Page No. : 4/4
A B
1 2 3
Marking:
3
C NA42
C
D
H I E F
G
1
Style: Pin 1.Emitter 2.Base 3.Collector 3-Lead TO-92 Plastic Package CYStek Package Code: A3
*: Typical
DIM A B C D E F
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
DIM G H I 1 2 3
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTNA42A3
CYStek Product Specification

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